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doped region

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  • heavily-doped region — stipriai legiruota sritis statusas T sritis radioelektronika atitikmenys: angl. heavily doped region vok. hochdotierter Bereich, m rus. сильнолегированная область, f pranc. région fortement dopée, f …   Radioelektronikos terminų žodynas

  • région fortement dopée — stipriai legiruota sritis statusas T sritis radioelektronika atitikmenys: angl. heavily doped region vok. hochdotierter Bereich, m rus. сильнолегированная область, f pranc. région fortement dopée, f …   Radioelektronikos terminų žodynas

  • Depletion region — In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region or the space charge region, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers… …   Wikipedia

  • Diode — Figure 1: Closeup of a diode, showing the square shaped semiconductor crystal (black object on left) …   Wikipedia

  • Multijunction photovoltaic cell — Multi junction solar cells or tandem cells are solar cells containing several p n junctions. Each junction is tuned to a different wavelength of light, reducing one of the largest inherent sources of losses, and thereby increasing efficiency.… …   Wikipedia

  • Charge-coupled device — A specially developed CCD used for ultraviolet imaging in a wire bonded package. A charge coupled device (CCD) is a device for the movement of electrical charge, usually from within the device to an area where the charge can be manipulated, for… …   Wikipedia

  • Power semiconductor device — Power semiconductor devices are semiconductor devices used as switches or rectifiers in power electronic circuits (switch mode power supplies for example). They are also called power devices or when used in integrated circuits, called power… …   Wikipedia

  • Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed …   Wikipedia

  • Anode — An anode is an electrode through which electric current flows into a polarized electrical device. Mnemonic: ACID (Anode Current Into Device). Electrons flow in the opposite direction to the positive electric current.A widespread misconception is… …   Wikipedia

  • High Electron Mobility Transistor — HEMT stands for High Electron Mobility Transistor, and is also called heterostructure FET (HFET) or modulation doped FET (MODFET). A HEMT is a field effect transistor incorporating a junction between two materials with different band gaps (i.e. a …   Wikipedia

  • Avalanche transistor — An Avalanche Transistor is a bipolar junction transistor designed for operation in the region of its collector current/collector to emitter voltage characteristics beyond the collector to emitter breakdown voltage, called avalanche breakdown… …   Wikipedia

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